IMPURITY DISTRIBUTION IN INSB SINGLE-CRYSTALS

The distribution of cadmium (Cd) dopant in InSb single crystals grown by the vertical Bridgman technique has been studied. The distribution coefficient was obtained by fitting a numerical solution of the diffus ion equation to the dopant profiles along growth direction. Measuremen t of the actual growth rate of the crystal using the Peltier demarcati on technique showed a large difference between the actual growth rate of the crystal and the specimen translation rate (nominal growth rate) . This difference strongly influenced the dopant distribution.