SEEDED GROWTH OF HGZNTE BY DIRECTIONAL SOLIDIFICATION USING AN INITIAL COMPOSITION PROFILE SIMULATING A DIFFUSION-BOUNDARY LAYER

Authors
SHA YG SU CH ALEXANDER HA LEHOCZKY SL WANG JC
Citation
Yg. Sha et al., SEEDED GROWTH OF HGZNTE BY DIRECTIONAL SOLIDIFICATION USING AN INITIAL COMPOSITION PROFILE SIMULATING A DIFFUSION-BOUNDARY LAYER, Journal of crystal growth, 174(1-4), 1997, pp. 267-271
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
174
Issue
1-4
Year of publication
1997
Pages
267 - 271
Database
ISI
SICI code
0022-0248(1997)174:1-4<267:SGOHBD>2.0.ZU;2-J
Abstract
Hg0.84Zn0.16Te crystals were grown vertically by back-melting a series of precast segments followed by directional solidification. The prede termined composition profiles of these segments simulate the distribut ion of a ''diffusion boundary'' layer in the melt ahead of the solid-m elt interface during the directional solidification experiment. Compos ition analysis of the grown crystals confirm that steady-state growth were achieved from the beginning of the growth process.