UV ABSORPTION-EDGE POSITION FOR CHARACTERIZATION OF YVO4 CRYSTALS GROWN BY CZOCHRALSKI AND TSSG TECHNIQUES

Authors
ERDEI S JIN BM AINGER FW
Citation
S. Erdei et al., UV ABSORPTION-EDGE POSITION FOR CHARACTERIZATION OF YVO4 CRYSTALS GROWN BY CZOCHRALSKI AND TSSG TECHNIQUES, Journal of crystal growth, 174(1-4), 1997, pp. 328-330
Citations number
14
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
174
Issue
1-4
Year of publication
1997
Pages
328 - 330
Database
ISI
SICI code
0022-0248(1997)174:1-4<328:UAPFCO>2.0.ZU;2-G
Abstract
The UV absorption edge of YVO4 crystal with a slight yttrium excess gr own by Czochralski (CZ) technique, after annealing in O-2 atmosphere, was compared with oxygen deficiency-free YVO4 crystals grown by the to p seeded solution growth (TSSG) technique. The measurements show that the TSSG crystal has higher transparency in near-UV than the CZ sample , demonstrating a better near-stoichiometric composition in the TSSG-Y VO4 single crystal.