PROGRESS IN THE CRYSTAL-GROWTH OF CE-COLQUIRIITES

Citation
Vk. Castillo et Gj. Quarles, PROGRESS IN THE CRYSTAL-GROWTH OF CE-COLQUIRIITES, Journal of crystal growth, 174(1-4), 1997, pp. 337-341
Citations number
8
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
174
Issue
1-4
Year of publication
1997
Pages
337 - 341
Database
ISI
SICI code
0022-0248(1997)174:1-4<337:PITCOC>2.0.ZU;2-O
Abstract
The search for an efficient solid-state laser with tunable emission in the ultraviolet wavelength region has resulted in the growth and deve lopment of cerium-doped colquiriite crystals, such as LiCaAlF6 (LiCAF) and LiSrAlF6 (LiSAF). Unfortunately, the doping of LiSAF and LiCAF wi th Ce3+ introduces different variables into the growth of high optical quality crystals, due to the charge imbalance induced when this triva lent ion substitutes for the divalent site. Charge compensation with N a+ tends to produce a more uniformly doped crystal with improved laser properties. Although preliminary research indicated that Ce : LiSAF m ay be the preferred material of the colquiriite hosts, Ce : LiCAF has also proved to be quite promising.