IN-SITU PRE-GROWTH CALIBRATION USING REFLECTANCE AS A CONTROL STRATEGY FOR MOCVD FABRICATION OF DEVICE STRUCTURES

In situ normal incidence reflectance, combined with a virtual interfac e model, is being used routinely on a commercial metal organic chemica l vapor deposition reactor to measure growth rates of compound semicon ductor films. The technique serves as a pre-growth calibration tool an alogous to the use of reflection high-energy electron diffraction in m olecular beam epitaxy as well as a real-time monitor throughout the ru n. An application of the method to the growth of a vertical cavity sur face emitting laser (VCSEL) device structure is presented. All necessa ry calibration information can be obtained using a single run lasting less than 1 h. Working VCSEL devices are obtained on the first try aft er calibration. Repeated runs have yielded +/-0.3% reproducibility of the Fabry-Perot cavity wavelength over the course of more than 100 run s.