EFFECT OF CE DOPING ON THE GROWTH OF ZNO THIN-FILMS

Recently, ZnO films doped by trivalent elements have attracted much at tention for use in transparent conductive films. The impurity doping t o control the carrier concentration generally causes degradation of cr ystallinity and preferred orientation which leads to the deterioration of electrical characteristics. In this paper: the effects of various doping trivalent elements on the growth process and change in carrier concentration in thin films are discussed. We find that the deteriorat ed crystallinity of ZnO film by Al doping is improved by Ce doping.