KINETIC LIMITATIONS ON INCORPORATION OF ZN IN CD1-XZNXTE

Experimental data that indicate Cd can be favored over Zn incorporatio n in Cd1-xZnxTe growth by MOCVD, and that a threshold fraction of diet hylzine in the gas phase must be present to incorporate any zinc into the film, are described. Changing from diethylzine to dimethylzine pus hed the threshold toward a higher fraction of diethylzinc. Other data indicated that the Cd and Zn precursors compete for the same adsorptio n sites on the growing film. A proposed model based on reaction kineti c limitations helped explain the data.