Cm. Zhang et al., THE INITIAL-STAGES OF AG AG(100) HOMOEPITAXY - SCANNING-TUNNELING-MICROSCOPY EXPERIMENTS AND MONTE-CARLO SIMULATIONS/, Journal of crystal growth, 174(1-4), 1997, pp. 851-857
Results are presented of a scanning tunneling microscopy study of Ag/A
g(100) homoepitaxy. We examine both submonolayer nucleation and growth
of two-dimensional islands, for temperatures between 295 and 370 K, a
nd the initial stages of multilayer kinetic roughening at 295 K. Compa
rison with results of Monte Carlo simulations for an appropriate model
for metal(100) homoepitaxy produces estimates of 330 +/- 5 meV for th
e terrace diffusion barrier, and an effective value of 30 +/- 5 meV fo
r the additional step-edge barrier (assuming a common prefactor of 10(
12)/s). We also assess adatom-adatom bonding by analyzing the transiti
on from irreversible to reversible island formation.