THE INITIAL-STAGES OF AG AG(100) HOMOEPITAXY - SCANNING-TUNNELING-MICROSCOPY EXPERIMENTS AND MONTE-CARLO SIMULATIONS/

Citation
Cm. Zhang et al., THE INITIAL-STAGES OF AG AG(100) HOMOEPITAXY - SCANNING-TUNNELING-MICROSCOPY EXPERIMENTS AND MONTE-CARLO SIMULATIONS/, Journal of crystal growth, 174(1-4), 1997, pp. 851-857
Citations number
31
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
174
Issue
1-4
Year of publication
1997
Pages
851 - 857
Database
ISI
SICI code
0022-0248(1997)174:1-4<851:TIOAAH>2.0.ZU;2-P
Abstract
Results are presented of a scanning tunneling microscopy study of Ag/A g(100) homoepitaxy. We examine both submonolayer nucleation and growth of two-dimensional islands, for temperatures between 295 and 370 K, a nd the initial stages of multilayer kinetic roughening at 295 K. Compa rison with results of Monte Carlo simulations for an appropriate model for metal(100) homoepitaxy produces estimates of 330 +/- 5 meV for th e terrace diffusion barrier, and an effective value of 30 +/- 5 meV fo r the additional step-edge barrier (assuming a common prefactor of 10( 12)/s). We also assess adatom-adatom bonding by analyzing the transiti on from irreversible to reversible island formation.