GAAS AND INP SELECTIVE MOLECULAR-BEAM EPITAXY

Authors
STREIT DC BLOCK TR HAN AC WOJTOWICZ M UMEMOTO DK KOBAYASHI K OKI AK LIU PH LAI R NG GI
Citation
Dc. Streit et al., GAAS AND INP SELECTIVE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 771-773
Citations number
8
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
2
Year of publication
1995
Pages
771 - 773
Database
ISI
SICI code
1071-1023(1995)13:2<771:GAISME>2.0.ZU;2-0