ELECTROMIGRATION IN ALSICU TIN/TI INTERCONNECTS WITH TI AND TIN ADDITIONAL LAYERS/

Authors
SEKIGUCHI M SAWADA K FUKUMOTO M KOUZAKI T
Citation
M. Sekiguchi et al., ELECTROMIGRATION IN ALSICU TIN/TI INTERCONNECTS WITH TI AND TIN ADDITIONAL LAYERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 2992-2996
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
5
Year of publication
1994
Pages
2992 - 2996
Database
ISI
SICI code
1071-1023(1994)12:5<2992:EIATIW>2.0.ZU;2-8
Abstract
AlSiCu/Ti(TiN)//TiN/Ti interconnect structures, which have been fabric ated by depositing a Ti or TiN additional layer on the TiN/Ti barrier exposed in atmospheric ambient and then by depositing AlSiCu on the ad ditional layer without breaking vacuum, have shown improved electromig ration lifetimes. These were 1.9 and 6.5 times longer than that of the conventional AlSiCu//TiN/Ti structure, for the TiN and Ti additional layer, respectively. From an analysis of these results, it has been as sumed that elongated lifetimes were caused by an enhancement of the Al (111) crystallographic orientation in the AlSiCu/TiN//TiN/Ti structure , and caused by both a reduction of the Si nodule concentration in AlS iCu due to Al-Si-Ti ternary alloy formation and Al(111) texture furthe r enhanced by the additional Ti underlayer in the AlSiCu/Ti//TiN/Ti st ructure.