DAMAGE BEHAVIOR OF SILICON BY MEV GE+ IRRADIATION UNDER TILTED ANGLE

The damage behavior of Si induced by MeV Ge+ under tilted angle has be en studied. In order to investigate the effect of implanted energy and angle on the damage distribution, the energies were varied from 1 to 2 MeV and the angles were varied from 7 degrees to 60 degrees. The exp erimental damage distribution is extracted based on the procedure by F eldman and Rodgers [L. E. Feldman and J. W. Rodgers, J. Appl. Phys. 41 , 3776 (1970)] using the multiple-scattering model. The experimental d ata obtained are compared with the TRIM'90 code. The results show that the lateral damage spread can not be neglected; the shape and the dep th of damage distribution are well described by the TRIM'90 code under tilted angle irradiation for Si(100).