MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB FOR P-I-N PHOTODETECTORS

Authors
SINGH G MICHEL E JELEN C SLIVKEN S XU J BOVE P FERGUSON I RAZEGHI M
Citation
G. Singh et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB FOR P-I-N PHOTODETECTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 782-785
Citations number
22
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
2
Year of publication
1995
Pages
782 - 785
Database
ISI
SICI code
1071-1023(1995)13:2<782:MEOHIF>2.0.ZU;2-6