ULTRATHIN NITRIDE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AND THEIR EFFECTS ON INTERFACE STATES IN SILICON METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Authors
FAYFIELD RT CHEN J HAGEDORN MS HIGMAN TK MOY AM CHENG KY
Citation
Rt. Fayfield et al., ULTRATHIN NITRIDE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AND THEIR EFFECTS ON INTERFACE STATES IN SILICON METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 786-788
Citations number
10
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
2
Year of publication
1995
Pages
786 - 788
Database
ISI
SICI code
1071-1023(1995)13:2<786:UNLGBM>2.0.ZU;2-X