Dv. Zhmurkin et al., INTERFACIAL SLIDING IN CU TA/POLYIMIDE HIGH-DENSITY INTERCONNECTS AS A RESULT OF THERMAL CYCLING/, Journal of electronic materials, 26(7), 1997, pp. 791-797
A scanning probe microscope was used to observe thermally induced defo
rmation of 1 mu m thick Cu/Ta/polyimide test structures on Si. Relativ
e height changes in arrays of parallel Cu and polyimide lines of vario
us aspect ratios were examined in air at room temperature before and a
fter a 25-350-25 degrees C thermal cycle conducted in gettered nitroge
n. Grain elevation and hillock formation at grain boundaries were obse
rved on the Cu surface as a result of the thermal cycling. It was also
observed that significant sliding occurs at the Cu/Ta interface with
1 mu m wide Cu lines. Less or no sliding was observed at the interface
with 10 mu m wide Cu lines.