OPTIMIZATION OF ZNSE GROWTH ON THE CLEAVAGE-INDUCED GAAS(110) SURFACEBY MOLECULAR-BEAM EPITAXY

Optimum conditions were investigated for the growth of high-quality Zn Se epitaxial layers on GaAs (1 1 0) cleaved surfaces in molecular-beam epitaxy (MBE) through the surface morphology, structural and optical characterizations. Most of the layers showed poor characteristics with bad surface morphology. However, the layer, which was grown at a subs trate temperature of 250 degrees C and with a beam-equivalent pressure ratio, i.e. p(Se)/p(Zn) of 1.0, skewed a strong and sharp photolumine scence spectrum. A free exciton peak was located at 2.807 eV indicatin g a coherent growth of the layer. Moreover, the layer showed a clear X -ray diffraction curve with high-order interference fringes and a mirr or-like surface morphology.