SIMULATIONS OF ZNSE GAAS HETEROEPITAXIAL GROWTH/

The epitaxial growth of ZnSe on GaAs(0 0 1) is simulated by employing a hybrid approach based on molecular dynamics to describe the initial kinetic behavior of deposited adatoms and Monte Carlo displacements to account for subsequent equilibration. Stillinger-Weber potentials are employed to describe interatomic interactions. This method is well-su ited to describe initial nucleation and growth. Results for a variety of growth temperature and interface structures are presented.