PREPARATION AND CHARACTERIZATION OF MGTIO3 THIN-FILMS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Citation
Jm. Zeng et al., PREPARATION AND CHARACTERIZATION OF MGTIO3 THIN-FILMS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 178(3), 1997, pp. 355-359
Citations number
12
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
178
Issue
3
Year of publication
1997
Pages
355 - 359
Database
ISI
SICI code
0022-0248(1997)178:3<355:PACOMT>2.0.ZU;2-8
Abstract
We report here for the first time, preparation of the ilmenite titanat e MgTiO3 thin films on Si and SrTiO3 substrates by atmospheric pressur e metalorganic chemical vapor deposition (APMOCVD) technique. Magnesiu m acetylacetonate [Mg(acac)(2)] and titanium isopropoxide [TIP] were u sed as the Mg and Ti precursors, and O-2 was the oxidizing gas. The de posited films were investigated using scanning electron microscopy, X- ray energy dispersion analysis and X-ray diffraction technique. The ex perimental results showed that the films deposited on silicon substrat e were single-phase randomly oriented MgTiO3, and on SrTiO3 substrate, only a (012) orientation was observed. The MgTiO3 films, prepared on SrTiO3(100) substrates at a growth temperature of 650 degrees C, were transparent in the visible and exhibited a sharp absorption edge at 38 0 nm in the ultraviolet. The birefringence of the MgTiO3 films was als o measured at room temperature by the cross-correlation method.