Development of In-based nitride compounds is lagging behind the corres
ponding Al- and Ga-based compounds. Potential problems facing the grow
th of InxGa(1-x) N films and their double heterostructures will be out
lined. A tentative model which describes the reaction pathways taking
place during the growth of these In-based nitride compounds is present
ed and is used to explain both our ALE and MOCVD results. In addition,
growth parameters leading to the achievement of high values of x, red
uction of In metal incorporation and improvement of both the structura
l and optical properties of InGaN, AlGaInN and InN will be discussed.
Properties of AlGaN/InGaN/AlGaN and AlGaInN/InGaN/AlGaInN double heter
ostructures will be presented, with emission wavelengths in the 400-55
0nm range.