GROWTH AND CHARACTERIZATION OF IN-BASED NITRIDE COMPOUNDS

Development of In-based nitride compounds is lagging behind the corres ponding Al- and Ga-based compounds. Potential problems facing the grow th of InxGa(1-x) N films and their double heterostructures will be out lined. A tentative model which describes the reaction pathways taking place during the growth of these In-based nitride compounds is present ed and is used to explain both our ALE and MOCVD results. In addition, growth parameters leading to the achievement of high values of x, red uction of In metal incorporation and improvement of both the structura l and optical properties of InGaN, AlGaInN and InN will be discussed. Properties of AlGaN/InGaN/AlGaN and AlGaInN/InGaN/AlGaInN double heter ostructures will be presented, with emission wavelengths in the 400-55 0nm range.