ANODIC FLUORIDE ON HGMNTE

Authors
SUN WG KOSYACHENKO LA RARENKO IM
Citation
Wg. Sun et al., ANODIC FLUORIDE ON HGMNTE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2202-2206
Citations number
9
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
15
Issue
4
Year of publication
1997
Pages
2202 - 2206
Database
ISI
SICI code
0734-2101(1997)15:4<2202:AFOH>2.0.ZU;2-6
Abstract
The formation of anodic fluoride on HgMnTe has been studied and the co mposition of the interface and the chemical depth profiles have been c haracterized by x-ray photoelectron spectroscopy technique. Comparison results between HgMnTe and HgCdTe were given. Metal-insulator-semicon ductor devices containing an anodic fluoride layer and a ZnS coating w ere fabricated and characterized. The mixture of anodic fluoride and t hin native oxide layer may create a good interface for HgMnTe passivat ion. (C) 1997 American Vacuum Society.