ATOMIC LAYER EPITAXY GROWTH OF ALUMINUM-OXIDE THIN-FILMS FROM A NOVELAL(CH3)(2)CL PRECURSOR AND H2O

The deposition of Al2O3 thin films by atomic layer epitaxy was investi gated using Al(CH3)(2)Cl as a new aluminum precursor. All the films gr own in the temperature range of 125-500 degrees C were amorphous as ex amined by x-ray diffraction analysis. The residual contents of carbon, chlorine, and hydrogen in the film deposited at 200 degrees C were 0. 2, 2.1, and 12 at. %, respectively, and diminished rapidly with increa sing growth temperature. The refractive index of the films increased w ith deposition temperature, stabilizing at the highest value of 1.68 a bove 300 degrees C. The permittivity of the films increased from 7.3 t o 8.7 with increasing growth temperature from 200 to 500 degrees C. Th e leakage current density was lowest in the him deposited at 200 degre es C and increased markedly at higher deposition temperatures. (C) 199 7 American Vacuum Society.