HIGH-POWER MIDINFRARED QUANTUM CASCADE LASERS WITH A MOLECULAR-BEAM EPITAXY-GROWN INP CLADDING OPERATING ABOVE ROOM-TEMPERATURE

Citation
J. Faist et al., HIGH-POWER MIDINFRARED QUANTUM CASCADE LASERS WITH A MOLECULAR-BEAM EPITAXY-GROWN INP CLADDING OPERATING ABOVE ROOM-TEMPERATURE, Journal of crystal growth, 175, 1997, pp. 22-28
Citations number
14
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
175
Year of publication
1997
Part
1
Pages
22 - 28
Database
ISI
SICI code
0022-0248(1997)175:<22:HMQCLW>2.0.ZU;2-D
Abstract
A new quantum cascade laser is reported with very high performance at high temperatures. These high performances are obtained by a design co mbining low doping, a funnel injector and a three well vertical transi tion active region. A molecular beam epitaxy grown InP top cladding la yer is also used to optimize heat transport. Peak pulsed optical power of 200 mW and average power of 6 mW are obtained at 300 K and at a wa velength lambda = 5.2 mu m. The devices operate also in continuous wav e up to 140 K with 2 mW of optical power.