LOW-THRESHOLD 1.3 MU-M INASP GAINASP LASERS GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY/

A threshold current density of 270 A/cm(2) has been measured for 2 mm long InAsP/GaInAsP broad area laser grown by solid source molecular be am epitaxy. To date, these are the lowest reported threshold current d ensity 1.3 mu m lasers by any type of MBE growth technique. An optimum growth temperature of 465 degrees C was determined for InAsP by maxim izing the photoluminescence intensity from a test structure modeled af ter the laser core, and a room-temperature photoluminescenced line wid th of 18 meV was measured on an actual laser growth.