BLUE AND GREEN ELECTROLUMINESCENCE FROM GAN INGAN HETEROSTRUCTURES/

Citation
R. Averbeck et al., BLUE AND GREEN ELECTROLUMINESCENCE FROM GAN INGAN HETEROSTRUCTURES/, Journal of crystal growth, 175, 1997, pp. 122-124
Citations number
5
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
175
Year of publication
1997
Part
1
Pages
122 - 124
Database
ISI
SICI code
0022-0248(1997)175:<122:BAGEFG>2.0.ZU;2-1
Abstract
GaN/InGaN pn-junctions were grown by molecular beam epitaxy. Depending on the In content bright blue (470 nm)or green (513 nm) electrolumine scence was observed at room temperature.