INAS GAAS INPLANE STRAINED SUPERLATTICES GROWN ON SLIGHTLY MISORIENTED (110)INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/

InAs/GaAs in-plane strained superlattices (IPSSLs) were grown by molec ular beam epitaxy. The substrates used were misoriented (1 1 0) InP ti lted in the [0 0 1] direction. We grew alternately half monolayers of InAs and GaAs while keeping the periodic single monolayer steps, The o btained structures were evaluated by transmission electron micros copy (TEM) and photoluminescence (PL) measurements. The TEM images reveale d that the laterally periodic structures were formed almost in the [0 0 1] direction. The lateral period corresponded to the mean terrace wi dth of the substrate. The PL peak energy obtained at 77 K was 0.77 eV, which was 40 meV lower than those of homogeneous InGaAs alloys. From the estimation of the transition energy dependence of In1-xGaxAs/InxGa 1-xAs strained superlattices on the mixing ratio x, we deduced that th e obtained IPSSL was composed of In0.74Ga0.26As/In(0.26)Ga(0.74)AS. Th is composition was consistent with the measurement by energy-dispersiv e X-ray microanalysis.