GROWTH DYNAMICS OF INGAAS GAAS BY MBE

The growth dynamics of the InGaAs/GaAs system have been investigated b y desorption mass spectrometry (DMS). Indium desorption spectra indica te the presence of one or two desorption mechanisms depending on the V /III beam equivalent pressure ratio. The activation energy associated with one of the desorption processes is found to be 1.3 eV and indepen dent of V/III ratio and arsenic species. Analysis of the decay curve a llows the calculation of the indium surface population during growth. This population is compared for the different growth conditions invest igated. Indium incorporation coefficient curves as a function of subst rate temperature are presented. Indium incorporation is found to be en hanced using high V/III ratio and the arsenic dimer, As-2.