ENHANCEMENT OF SUBSTITUTIONAL CARBON INCORPORATION IN HYDROGEN-MEDIATED PSEUDOMORPHIC GROWTH OF STRAINED ALLOY LAYERS ON SI(001)

Authors
LIPPERT G ZAUMSEIL P OSTEN HJ KIM M
Citation
G. Lippert et al., ENHANCEMENT OF SUBSTITUTIONAL CARBON INCORPORATION IN HYDROGEN-MEDIATED PSEUDOMORPHIC GROWTH OF STRAINED ALLOY LAYERS ON SI(001), Journal of crystal growth, 175, 1997, pp. 473-476
Citations number
3
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
175
Year of publication
1997
Part
1
Pages
473 - 476
Database
ISI
SICI code
0022-0248(1997)175:<473:EOSCII>2.0.ZU;2-X
Abstract
The reduction of strain in SiGe layers on Si substrate is possible by the substitutional incorporation of carbon into the SiGe lattice. The carbon incorporation depending on various growth parameters could be i mproved by an additional hydrogen residual atmosphere during MBE. Grow th temperature in the range between 400 degrees C and 550 degrees C su pports the amount of substitutional carbon in silicon.