CHARACTERIZATION OF HOMOEPITAXIAL SIC LAYERS

Authors
SCHMITT J TROFFER T CHRISTIANSEN K SCHADT M CHRISTIANSEN S HELBIG R PENSL G STRUNK HP
Citation
J. Schmitt et al., CHARACTERIZATION OF HOMOEPITAXIAL SIC LAYERS, Journal of crystal growth, 175, 1997, pp. 528-531
Citations number
4
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
175
Year of publication
1997
Part
1
Pages
528 - 531
Database
ISI
SICI code
0022-0248(1997)175:<528:COHSL>2.0.ZU;2-1
Abstract
An n-type 3C-SiC MBE layer is grown on an off-oriented p-type 6H-SiC s ubstrate with alternating supply of gas sources at a growth temperatur e of 1100 degrees C. The crystalline quality of the 3C-SiC layer is ch aracterized by high resolution transmission electron microscopy and th e electrical properties of this layer are investigated by a series of analytical techniques (current-voltage measurement, capacitance-voltag e measurement, deep level transient spectroscopy).