INVESTIGATION OF THE STRUCTURAL-PROPERTIES OF MBE GROWN ZNSE GAAS HETEROSTRUCTURES/

The results of photoluminescence and Raman spectroscopies, high resolu tion X-ray diffraction, and Auger electron spectroscopy are analyzed i n terms of the structural properties of the ZnSe/GaAs(1 0 0) system as a function of film thickness and substrate temperature, The results o f Raman spectroscopy and X-ray diffraction clearly show that the strai n in the film is inhomogeneous and depends only on him thickness and n ot on growth temperature in the 285-325 degrees C range. From these ex periments a value of similar to 0.17 mu m is inferred for the critical thickness of ZnSe on GaAs. Photoluminescence experiments sensitive to the ZnSe/GaAs interface reveal the presence of strain in the GaAs sub strate, Analysis of the intensities of the LMM Auger transitions of Zn and Se indicate the formation of an interfacial layer with excess of Se, suggesting the formation of a pseudomorphic Ga-Se compound mixed w ith ZnSe at the interfacial region.