MOLECULAR-BEAM EPITAXY OF BETE ON VICINAL SI(100) SURFACES

BeTe was epitaxially grown on vicinal Si(1 0 0) substrates for the fir st time. Reflection high energy electron diffraction (RHEED) was used to study the initial growth mode and the surface structure. Transmissi on elect ron microscopy (TEM) was used to study the crystal quality. T he material was grown on both bare and arsenic covered vicinal Si(1 0 0) surfaces. Smooth and well-ordered surface structures readily formed during the growth. Low stacking-fault densities were obtained in the BeTe epilayers. The potential applications of the new material are dis cussed briefly.