ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF ZNSE-BASED BLUE-GREEN LASER-DIODE GROWN BY MOLECULAR-BEAM EPITAXY

ZnSe-based II-VI laser diodes were grown by using molecular beam epita xy (MBE) on GaAs(1 0 0) substrates. Continuous-wave, stimulated emissi on at room temperature was observed at a wavelength of 536.5 nm with a threshold current of 45 mA (642 A/cm(2)) from a ZnCdSe/ZnSSe/ZnMgSSe single quantum well separate confinement heterostructure laser diode. A lifetime of 11 s was achieved when the defect density of laser diode structure was less than 10(5) cm(-2). Electroluminescence tests were conducted to find the origin of the defect generation at the laser dio de structure. We monitored the generation of the dark line defects alo ng (1 0 0) during the electroluminescence.