ELLIPSOMETRIC ANALYSIS OF CDZNTE PREPARATION FOR HGCDTE MBE GROWTH

An in-situ spectroscopic ellipsometer has been installed on a molecula r beam epitaxy system to improve control of HgCdTe molecular beam epit axy. Using the spectroscopic ellipsometer, in-situ analysis of substra te preparation, surface cleanliness and substrate temperature were mon itored. These results were correlated with in-situ reflection high ene rgy electron diffraction and Auger spectroscopy. A real time spectrosc opic ellipsometric model was developed which determined the substrate temperature as well as the overlayer thickness.