A STUDY OF MBE GROWTH AND THERMAL ANNEALING OF P-TYPE LONG-WAVELENGTHHGCDTE

Authors
HE L YANG JR WANG SL GUO SP YU MF CHEN XQ FANG WZ QIAO YM ZHANG QY DING RJ XIN TL
Citation
L. He et al., A STUDY OF MBE GROWTH AND THERMAL ANNEALING OF P-TYPE LONG-WAVELENGTHHGCDTE, Journal of crystal growth, 175, 1997, pp. 677-681
Citations number
14
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
175
Year of publication
1997
Part
1
Pages
677 - 681
Database
ISI
SICI code
0022-0248(1997)175:<677:ASOMGA>2.0.ZU;2-J
Abstract
The results of MBE growth and annealing of p-type HgCdTe are described in the paper. It is found that the surface morphology is sensitive to the growth temperature. HgCdTe epilayers showed excellent lateral uni formity in x-values as well as in thickness, relative deviations for x and thickness over a 2 in. wafer were found to be 0.18% and 2.19%, re spectively. The hole concentrations in a range of (1-2) x 10(16) cm(-3 ) with hole mobilities higher than 600 cm(2) V(-1)s(-1) were obtained by p-annealing. MBE grown p-HgCdTe epilayers were successfully incorpo rated into 32 x 32 focal plane arrays detectors.