EFFECT OF YTTERBIUM IMPURITY ON THE PROPERTIES OF GALLIUM-ARSENIDE EPITAXIAL LAYERS

Authors
ARBENINA VV KABANOVA EG
Citation
Vv. Arbenina et Eg. Kabanova, EFFECT OF YTTERBIUM IMPURITY ON THE PROPERTIES OF GALLIUM-ARSENIDE EPITAXIAL LAYERS, Inorganic materials, 33(7), 1997, pp. 651-653
Citations number
7
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
33
Issue
7
Year of publication
1997
Pages
651 - 653
Database
ISI
SICI code
0020-1685(1997)33:7<651:EOYIOT>2.0.ZU;2-B
Abstract
Yb-doped GaAs layers were grown by liquid-phase epitaxy (LPE) from hig h-temperature solution. The introduction of Yb into the melt leads to changes in the electrical properties and low-temperature photoluminesc ence spectra of the epilayers. The effect of Yb doping is discussed in relation to the chemistry of impurities in LPE GaAs.