K. Misiakos et al., MEASUREMENT AND MODELING OF THE ANOMALOUS DYNAMIC-RESPONSE OF HIGH-RESISTIVITY DIODES AT CRYOGENIC TEMPERATURES, Solid-state electronics, 41(8), 1997, pp. 1099-1103
A negative dynamic conductance and a negative dynamic capacitance were
observed when a high resistivity (10 k Ohm cm) silicon p/i/n diode is
based in the double injection regime at liquid helium temperatures. A
t high frequencies (above 100 kHz) the negative capacitance varies as
1/omega(2) while the negative conductance exhibits a more complex beha
vior and, eventually changes sign at even higher frequencies (1 MHz).
A quantitative model is presented which accounts for the conductance a
nd capacitance behavior as a function of frequency and bias. The model
is based on the shallow donor impact ionization and carrier trapping
at the ionized donors. Additionally the breakdown voltage of the stati
c I-V characteristics is used to calculate the unintentional compensat
ion in the high resistivity substrate. (C) 1997 Elsevier Science Ltd.