VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN SI INVERSION-LAYERS

Authors
SINITSKY D ASSADERAGHI F ORSHANSKY M BOKOR J HU C
Citation
D. Sinitsky et al., VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN SI INVERSION-LAYERS, Solid-state electronics, 41(8), 1997, pp. 1119-1125
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
8
Year of publication
1997
Pages
1119 - 1125
Database
ISI
SICI code
0038-1101(1997)41:8<1119:VOOEAH>2.0.ZU;2-C
Abstract
Velocity overshoot of inversion layer electrons and holes is studied e xperimentally and analytically in special test structures with nominal ly uniform electric field. The data were used to calibrate energy rela xation parameters in a commercial simulator MEDICI ver. 2.0. We propos e an analytical model for velocity overshoot and show that it agrees w ell with experimental data. The amount of hole velocity overshoot is s mall. (C) 1997 Elsevier Science Ltd.