PHYSICAL MODELS FOR STRAINED AND RELAXED GAINAS ALLOYS - BAND-STRUCTURE AND LOW-FIELD TRANSPORT

We describe models for physical properties of the technologically sign ificant GaInAs material system with respect to its composition and str ain conditions introduced by strained-layer heteroepitaxy. We give an empirical relation for the critical thickness which takes growth condi tions into account and allows the residual strain for layer thicknesse s exceeding the critical one to be estimated. Easy to use models for t he band edge energy and effective mass are presented, which are based on deformation potential and k.p theory. Monte Carlo calculations were employed to obtain a model for the anisotropic electron mobility. All models are given as functions of the independent parameters compositi on and strain which are no longer strictly coupled in the relaxed case .