NONPARABOLIC MULTIVALLEY BALANCE-EQUATION APPROACH TO HIGH-FIELD ELECTRON-TRANSPORT IN GAAS

Authors
CAO JC LEI XL
Citation
Jc. Cao et Xl. Lei, NONPARABOLIC MULTIVALLEY BALANCE-EQUATION APPROACH TO HIGH-FIELD ELECTRON-TRANSPORT IN GAAS, Solid-state electronics, 41(8), 1997, pp. 1181-1183
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
8
Year of publication
1997
Pages
1181 - 1183
Database
ISI
SICI code
0038-1101(1997)41:8<1181:NMBATH>2.0.ZU;2-J
Abstract
This paper reports on a study of high-field transport in bulk GaAs on the basis of the nonparabolic balance equations recently extended to s ystems having a multiband structure. Nonlinear transport effects are a nalyzed taking account of the nonparabolicity of the band structure. T he nonparabolic results for the drift velocity in n-type GaAs shaw goo d agreement with those from MC simulation and with measured data. It i s shown that the nonparabolic balance equations can be used as an alte rnative theoretical approach to high-field transport in nonparabolic m ultivalley semiconductors. (C) 1997 Elsevier Science Ltd.