DONOR AVALANCHE BREAKDOWN FIELD IN N-GAAS - EFFECT OF CONCENTRATION AND LATTICE TEMPERATURE

Authors
DARGYS A KUNDROTAS J
Citation
A. Dargys et J. Kundrotas, DONOR AVALANCHE BREAKDOWN FIELD IN N-GAAS - EFFECT OF CONCENTRATION AND LATTICE TEMPERATURE, Solid-state electronics, 41(8), 1997, pp. 1185-1188
Citations number
28
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
8
Year of publication
1997
Pages
1185 - 1188
Database
ISI
SICI code
0038-1101(1997)41:8<1185:DABFIN>2.0.ZU;2-2
Abstract
A threshold avalanche breakdown field associated with the impact ioniz ation of shallow donors by hot electrons in n-GaAs is calculated from the Boltzmann transport equation for various values of donor concentra tion, compensation ratio and lattice temperature. At low and moderate donor concentrations, N-D < 10(15) cm(-3), the results are in good agr eement with the available experimental data. The curves on the avalanc he breakdown field presented in this paper may be used in optimizing t he operational characteristics of impurity-based cryogenic devices, su ch as far-infrared photomultipliers. (C) 1997 Elsevier Science Ltd.