GATE OXIDE THICKNESS DEPENDENCE OF LDD MOSFET PARAMETERS

Authors
HASSAN MR LIOU JJ ORTIZCONDE A
Citation
Mr. Hassan et al., GATE OXIDE THICKNESS DEPENDENCE OF LDD MOSFET PARAMETERS, Solid-state electronics, 41(8), 1997, pp. 1199-1201
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
8
Year of publication
1997
Pages
1199 - 1201
Database
ISI
SICI code
0038-1101(1997)41:8<1199:GOTDOL>2.0.ZU;2-C