A-SI-H DIODES FOR ACTIVE-MATRIX ADDRESSING

Amorphous silicon diodes can be used as simple, two-terminal switches in active matrix addressing of display and image sensor arrays. These switching diodes provide an alternative to transistors with a simpler technology and fewer pixel connections. This paper presents different addressing schemes in which switching diodes can be used and discusses relevant device physics for these applications. In particular, it con siders the mechanisms of the forward I-V characteristics and the trans ient response of the diodes under typical operation conditions. The tr ansient response can be simulated with a simple equivalent circuit mod el that contains a voltage dependent capacitance and a parasitic recom bination diode. The presence of the parasitic diode means that the per formance of a-Si:H diodes as active matrix switches is better than pre dicted merely from the steady state characteristics.