A new type of amorphous semiconductor thin-film optoelectronic functio
nal device has been developed. The device consists of an amorphous sil
icon carbon (a-Si1-xCx:H) visible-light emitter and a photosensor, whi
ch are integrated into a multi-layered structure by a simple RF plasma
CVD process. The developed functional element acts as a light-convert
er or an image converter. It is demonstrated that the output light on/
off can be controlled with an applied voltage and input light, and tha
t an input light image is transferred to an output emission light patt
ern. The proposed device would have a wide variety of applications, su
ch as thin-film optoelectronic integrated circuits (OEIC) and image tr
anslation devices, with full utilization of the unique advantages of a
morphous materials.