PENTACENE-BASED ORGANIC THIN-FILM TRANSISTORS

Citation
Yy. Lin et al., PENTACENE-BASED ORGANIC THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 44(8), 1997, pp. 1325-1331
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
44
Issue
8
Year of publication
1997
Pages
1325 - 1331
Database
ISI
SICI code
0018-9383(1997)44:8<1325:POTT>2.0.ZU;2-Y
Abstract
Organic thin-film transistors using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material have shown mo bility as large as 0.7 cm(2)/V-s and on/off current ratio larger than 10(8); both values are comparable to hydrogenated amorphous silicon de vices. On the other hand, these and most other organic TFT's have an u ndesirably large subthreshold slope. We show here that the large subth reshold slope typically observed is not an intrinsic property of the o rganic semiconducting material and that devices with subthreshold slop e similar to amorphous silicon devices are possible.