A 2-DIMENSIONAL SIMULATION OF ORGANIC TRANSISTORS

In this paper, we analyze the operation of organic thin-film transisto rs (TFT's) using two-dimensional (2-D) numerical simulation to: 1) val idate the use of simple MOSFET theory to describe the above-threshold behavior; 2) clarify the subthreshold characteristics, and short-chann el effects; and 3) illustrate the operation of organic bilayer devices . Our analysis clarifies a number of issues that can help in device de sign. We also point out differences between the material parameters us ed in Si-MOSFET and organic FET simulation, and discuss the circumstan ces under which a semiconductor device simulator can be used for the s imulation of orgranic transistors.