Strained pseudomorphic InGaAsP/GaAs layers: Epitaxial growth, electronic properties and photocathode applications

Authors
Alperovich, VL Bolkhovityanov, YB Chikichev, SI Jaroshevich, AS Paulish, AG Terekhov, AS
Citation
Vl. Alperovich et al., Strained pseudomorphic InGaAsP/GaAs layers: Epitaxial growth, electronic properties and photocathode applications, OPTOEL PROP, 9, 2000, pp. 651-726
Categorie Soggetti
Current Book Contents
Journal title
INP AND RELATED COMPOUNDS : MATERIALS, APPLICATIONS AND DEVICES → ACNP
Volume
9
Year of publication
2000
Pages
651 - 726
Database
ISI
SICI code