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Results:
1-16
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Results: 16
Authors:
Manasreh, MO
Citation: Mo. Manasreh, InP and related compounds - Materials, applications and devices - Introduction, OPTOEL PROP, 9, 2000, pp. 1-7
Authors:
Oda, O
Fukui, T
Hirano, R
Uchida, M
Kohiro, K
Kurita, H
Kainosho, K
Asahi, S
Suzuki, K
Citation: O. Oda et al., Recent technologies in InP bulk crystals, OPTOEL PROP, 9, 2000, pp. 9-65
Authors:
Fornari, R
Jimenez, J
Citation: R. Fornari et J. Jimenez, Semi-insulating InP substrates: Preparation, thermal treatment, physical properties and homogeneity, OPTOEL PROP, 9, 2000, pp. 67-129
Authors:
Lourdudoss, S
Soderstrom, D
Kjebon, O
Citation: S. Lourdudoss et al., Epitaxial semi-insulating III-V layers for optoelectronic device fabrication, OPTOEL PROP, 9, 2000, pp. 131-163
Authors:
Pajot, B
Citation: B. Pajot, Electrical and optical properties of hydrogen-containing indium phosphide, OPTOEL PROP, 9, 2000, pp. 165-199
Authors:
De Souza, PL
Citation: Pl. De Souza, Delta doping of InP and related compounds, OPTOEL PROP, 9, 2000, pp. 201-249
Authors:
Fujiwara, Y
Ofuchi, H
Tabuchi, M
Takeda, Y
Citation: Y. Fujiwara et al., Growth condition dependencies of optical properties of Er in InP and localstructures, OPTOEL PROP, 9, 2000, pp. 251-311
Authors:
Ramvall, P
Citation: P. Ramvall, Transport properties of modulation doped GaInAs/InP quantum wells, OPTOEL PROP, 9, 2000, pp. 313-379
Authors:
Beaudoin, M
Desjardins, P
Yip, RYF
Masut, RA
Citation: M. Beaudoin et al., Optical and structural properties of InAsP/(Ga)InP multilayers on InP(001): Strained-layer multiple quantum well structures and devices, OPTOEL PROP, 9, 2000, pp. 381-458
Monolayer scale analysis of heterostructures and interfaces by X-ray CTR scattering and interference
Authors:
Takeda, Y
Tabuchi, M
Citation: Y. Takeda et M. Tabuchi, Monolayer scale analysis of heterostructures and interfaces by X-ray CTR scattering and interference, OPTOEL PROP, 9, 2000, pp. 459-512
Authors:
Nakashima, K
Citation: K. Nakashima, Characterization of the anomalous lattice-relaxation process in InAsP/InGaAsP strained layer superlattices by X-ray diffraction measurements, OPTOEL PROP, 9, 2000, pp. 513-568
Authors:
Nonogaki, Y
Fujiwara, Y
Takeda, Y
Citation: Y. Nonogaki et al., Organometallic vapor phase and droplet heteroepitaxy of quantum structures, OPTOEL PROP, 9, 2000, pp. 569-602
Authors:
Hawkins, SA
Chauvet, M
Salamo, GJ
Segev, M
Bliss, DF
Iseler, G
Bryant, G
Citation: Sa. Hawkins et al., Use of the photorefractive effect to form optical waveguides in InP, OPTOEL PROP, 9, 2000, pp. 603-649
Authors:
Alperovich, VL
Bolkhovityanov, YB
Chikichev, SI
Jaroshevich, AS
Paulish, AG
Terekhov, AS
Citation: Vl. Alperovich et al., Strained pseudomorphic InGaAsP/GaAs layers: Epitaxial growth, electronic properties and photocathode applications, OPTOEL PROP, 9, 2000, pp. 651-726
Authors:
Mawst, LJ
Citation: Lj. Mawst, InGaAsP/GaAs quantum well lasers grown by metalorganic chemical vapor deposition, OPTOEL PROP, 9, 2000, pp. 727-786
Authors:
Takamoto, T
Citation: T. Takamoto, InGaP/GaAs tandem solar cells, OPTOEL PROP, 9, 2000, pp. 787-937
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1-16
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