ATOMICALLY FLAT OMVPE GROWTH OF GAINAS AND INP OBSERVED BY AFM FOR LEVEL NARROWING IN RESONANT-TUNNELING DIODES

Authors
SUHARA M NAGAO C HONJI H MIYAMOTO Y FURUYA K TAKEMURA R
Citation
M. Suhara et al., ATOMICALLY FLAT OMVPE GROWTH OF GAINAS AND INP OBSERVED BY AFM FOR LEVEL NARROWING IN RESONANT-TUNNELING DIODES, Journal of crystal growth, 179(1-2), 1997, pp. 18-25
Citations number
16
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
179
Issue
1-2
Year of publication
1997
Pages
18 - 25
Database
ISI
SICI code
0022-0248(1997)179:1-2<18:AFOGOG>2.0.ZU;2-E
Abstract
The topography of InP and Ga0.47In0.53As surfaces grown by organometal lic vapor phase epitaxy (OMVPE) was investigated using atomic force mi croscopy (AFM). Monolayer steps with atomically flat terraces, several hundred nanometers width, were formed for both InP and GaInAs. The bo undary growth condition between step flow mode and 2D-nucleation mode was studied for InP and GaInAs, respectively. Applying step flow mode to the growth of GaInAs/InP resonant tunneling diodes, a remarkable re duction of the energy level width fom 51 to is meV was observed.