By using HBr-H3PO4-K2Cr2O7 solution, bevels through InP-based structur
es were prepared. On InP/InGaAsP structure the bevel angles in the ran
ge 3 x 10(-5) to 2 x 10(-4) rad were obtained with good linearity of t
he bevel profile. The dependence of bevel angle on the etchant flow sp
eed was measured and discussed.