SURFACE MODIFICATION AND IMAGING OF HYDROGEN PASSIVATED SILICON WITH A COMBINED SCANNING ELECTRON SCANNING TUNNELING MICROSCOPE

A scanning tunneling microscope (STM) was developed to work in conjunc tion with a field emission scanning electron microscope (SEM) to explo it the different capabilities of the two instruments. The degrees of f reedom necessary for STM tip and sample alignment were achieved mechan ically using a translation stage incorporating parallelogram flexure h inges. It was found, through studies of lithography by depassivation o f silicon, that the SEM was able to image depassivation patterns creat ed by the STM, The origins of a number of interesting STM scan artifac ts were identified with the combined STM/SEM using this capability.