NOISE AND FLUCTUATIONS IN SUBMICROMETRIC AL-SI INTERCONNECT LINES

Low-frequency noise (LFN) in excess has been observed in the past in m etal Lines subjected to high current densities, Different types of noi se and fluctuations have been identified and are briefly summarized in the first part of this paper. Then, some new experimental results, ob tained with Al/Si submicrometric lines, are presented, In particular, it has been possible to identify and separate the contribution of thre e different sources of noise and, from the analysis of the noise compo nent directly related to electromigration, an activation energy of abo ut 1.4 eV has been obtained, This value clearly indicates that in thes e samples bulk electromigration is the main cause of the noise generat ion, Moreover, the consistency between the measured level of noise and the value of some physical quantities, contained in a model previousl y proposed, has been verified. In the final section of the paper, old and new results are utilized ire an attempt to provide a satisfactory answer to some of the most important unsolved questions in this field.