A NEW APPROACH TO EXTRACT THE THRESHOLD VOLTAGE OF MOSFETS

Authors
ORTIZCONDE A FERNANDES EDG LIOU JJ HASSAN MR GARCIASANCHEZ FJ DEMERCATO G WONG WS
Citation
A. Ortizconde et al., A NEW APPROACH TO EXTRACT THE THRESHOLD VOLTAGE OF MOSFETS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1523-1528
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
9
Year of publication
1997
Pages
1523 - 1528
Database
ISI
SICI code
0018-9383(1997)44:9<1523:ANATET>2.0.ZU;2-4
Abstract
A new method is presented to extract the threshold voltage of MOSFET's , It is developed based on an integral function which is insensitive t o the drain and source series resistances of the MOSFET's. The method is tested in the environments of circuit simulator (SPICE), device sim ulation (MEDICI), and measurements.